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TPCF8105 - Field Effect Transistor

Toshiba

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Datasheet Details

Part number	TPCF8105
Manufacturer	Toshiba ↗
File Size	249.88 KB
Description	Field Effect Transistor
Datasheet	TPCF8105_Toshiba.pdf

TPCF8105 Product details

Features

(1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 24 mΩ (typ. ) (VGS = -4.5 V) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -0.5 mA) 3. Packaging and Internal Circuit 5: Source 4: Gate 1, 2, 3, 6, 7, 8: Drain VS-8 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain curr.

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Published: Nov 11, 2013 |