TK7S10N1Z Silicon N-Channel MOSFET

Toshiba

Description

MOSFETs Silicon N-channel MOS (U-MOS-H) TK7S10N1Z 1.Applications * Automotive * Switching Voltage Regulators * Motor Drivers.

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Datasheet Specifications

Part number: TK7S10N1Z
Manufacturer: Toshiba ↗
File Size: 271.62 KB
Datasheet: TK7S10N1Z-Toshiba.pdf
Description: Silicon N-Channel MOSFET

Features

* (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 40 mΩ (typ. ) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit TK7S10N1Z 1: Gate 2: Drain (heatsink) 3: Sou

Applications

* Automotive
* Switching Voltage Regulators

TK7S10N1Z Distributors

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TK7S10N1Z Silicon N-Channel MOSFET Toshiba

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