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TK7S10N1Z - Silicon N-Channel MOSFET

Toshiba

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Datasheet Details

Part number	TK7S10N1Z
Manufacturer	Toshiba
File Size	271.62 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK7S10N1Z-Toshiba.pdf

TK7S10N1Z Product details

Features

(1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 40 mΩ (typ. ) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit TK7S10N1Z 1: Gate 2: Drain (heatsink) 3: Source DPAK+ 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (.

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Published: Jun 28, 2014 |