Datasheet Specifications
- Part number
- TK3A90E
- Manufacturer
- Toshiba ↗
- File Size
- 385.04 KB
- Datasheet
- TK3A90E-Toshiba.pdf
- Description
- N-Channel MOSFET
Description
MOSFETs Silicon N-Channel MOS (π-MOS) TK3A90E 1.Applications * Switching Voltage Regulators 2..
Features
* (1) Low drain-source on-resistance : RDS(ON) = 3.7 Ω (typ. ) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode : Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.25 mA) 3. Packaging and Internal Circuit TK3A90E 1 : Gate 2 : Drain 3 : Source TO-220SIS 4. Absolute Maximum RatingTK3A90E Distributors
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