TK30J25D - Silicon N-Channel MOSFET

Name: TK30J25D
SKU: TK30J25D-837097

Toshiba Semiconductor

The TK30J25D by Toshiba Semiconductor is a Silicon N-Channel MOSFET. Below is the official datasheet preview.

Datasheet Details

Part number	TK30J25D
Manufacturer	Toshiba Semiconductor
File Size	231.71 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK30J25D-ToshibaSemiconductor.pdf
Additional preview pages of the TK30J25D datasheet.

(1) Low drain-source on-resistance: RDS(ON) = 0.046 Ω (typ. ) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK30J25D 1: Gate (G) 2: Drain (D)(Heatsink) 3: Source (S) TO-3P(N) 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 250 V Gate-source voltage Drain current (DC) Drain current (pulsed).

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Published: Sep 5, 2014 |