Datasheet Specifications
- Part number
- TK3A60DA
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 191.22 KB
- Datasheet
- TK3A60DA-ToshibaSemiconductor.pdf
- Description
- N-Channel MOSFET
Description
TK3A60DA TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK3A60DA Switching Regulator Applications * * * .
Features
* combustions or explosions, safApplications
* Low drain-source ON-resistance: RDS (ON) = 2.2 Ω(typ. ) High forward transfer admittance: |Yfs| = 1.5 S (typ. ) Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum RatingsTK3A60DA Distributors
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