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TK31Z60X Silicon N-Channel MOSFET

TK31Z60X Description

MOSFETs Silicon N-Channel MOS (DTMOS-H) TK31Z60X 1.Applications * Switching Voltage Regulators 2..

TK31Z60X Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ. ) by used to Super Junction Structure : DTMOS (2) High-speed switching properties with lower capacitance. (3) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1.5 mA) 3. Packaging and Internal Circuit TK31Z60X TO-247-4L(T) 1. Drain

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Silicon N-Channel MOSFET Toshiba
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