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TK31V60W - Silicon N-Channel MOSFET

Features

  • (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.078 Ω (typ. ) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1.5 mA) 3. Packaging and Internal Circuit 1: Gate 2: Source1 3,4: Source2 5: Drain (Heatsink) Notice: Please use the source1 pin for gate input signal return. Make sure that the main current flows into the source2 pins. DFN8x8 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specifie.

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Datasheet Details

Part number TK31V60W
Manufacturer Toshiba
File Size 241.00 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TK31V60W Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TK31V60W MOSFETs Silicon N-Channel MOS (DTMOS) TK31V60W 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.078 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1.5 mA) 3. Packaging and Internal Circuit 1: Gate 2: Source1 3,4: Source2 5: Drain (Heatsink) Notice: Please use the source1 pin for gate input signal return. Make sure that the main current flows into the source2 pins. DFN8x8 4.
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