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TGI5964-120L MICROWAVE POWER GaN HEMT

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Description

MICROWAVE POWER GaN HEMT TGI5964-120L .

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Features

* ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER Pout= 51.0dBm at Pin= 43dBm ŋHIGH GAIN GL= 13.5dB at Pin= 20dBm ŋLOW INTERMODULATION DISTORTION IM3= -25dBc(Min. ) at Pout= 44dBm (Single Carrier Level) ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS SYMBOL C

TGI5964-120L Distributors

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