TGI0910-50 MICROWAVE POWER GaN HEMT

Toshiba

Description

MICROWAVE POWER GaN HEMT TGI0910-50 .

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Datasheet Specifications

Part number: TGI0910-50
Manufacturer: Toshiba ↗
File Size: 295.60 KB
Datasheet: TGI0910-50-Toshiba.pdf
Description: MICROWAVE POWER GaN HEMT

Features

* ŋBROAD BAND INTERNALLY MATCHED HEMT ŋHIGH POWER Pout= 47.0dBm at Pin= 41dBm ŋHIGH GAIN GL= 9.0dB at Pin= 20dBm ŋHERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS SYMBOL CONDITIONS UNIT MIN. TYP. MAX. Output Power Drain Current Power Added Efficiency Pout I

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TGI0910-50 MICROWAVE POWER GaN HEMT Toshiba

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