Datasheet Specifications
- Part number
- TGI5867-50L
- Manufacturer
- Toshiba ↗
- File Size
- 500.49 KB
- Datasheet
- TGI5867-50L-Toshiba.pdf
- Description
- MICROWAVE POWER GaN HEMT
Description
MICROWAVE POWER GaN HEMT TGI5867-50L .
Features
* ･BROAD BAND INTERNALLY MATCHED HEMT ･HIGH POWER Pout= 47.0dBm at Pin= 39.0dBm ･HIGH GAIN GL= 13.5dB at 5.85GHz to 6.75GHz ･LOW INTERMODULATION DISTORTION IM3(Min. )= -40dBc at Po=32.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS SYTGI5867-50L Distributors
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