K3566 Silicon N-Channel MOSFET

Toshiba

Description

2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) 2SK3566 Switching Regulator Applications * Low drain-source ON-r.

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Datasheet Specifications

Part number: K3566
Manufacturer: Toshiba ↗
File Size: 209.56 KB
Datasheet: K3566_Toshiba.pdf
Description: Silicon N-Channel MOSFET

Applications

* Low drain-source ON-resistance: RDS (ON) = 5.6 Ω (typ. )
* High forward transfer admittance: |Yfs| = 2.0 S (typ. )
* Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)
* Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratin

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