K2717 Silicon N Channel MOS Type Field Effect Transistor

Toshiba

Description

2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π *MOSIII) 2SK2717 DC *DC Converter and Motor Drive Applications U.

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Datasheet Specifications

Part number: K2717
Manufacturer: Toshiba ↗
File Size: 248.43 KB
Datasheet: K2717_Toshiba.pdf
Description: Silicon N Channel MOS Type Field Effect Transistor

Applications

* Unit: mm l Low drain
* source ON resistance : RDS (ON) = 2.3 Ω (typ. ) l High forward transfer admittance : |Yfs| = 4.4 S (typ. ) l Low leakage current : IDSS = 100 µA (max) (VDS = 720 V) l Enhancement
* mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Ch

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K2717 Silicon Channel MOS Type Field Effect Transistor Toshiba

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