K2719 N-Channel MOS Type Field Effect Transistor

Toshiba Semiconductor

Description

2SK2719 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII) 2SK2719 Chopper Regulator, DC-DC Converter and Motor Drive Applications.

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Datasheet Specifications

Part number: K2719
Manufacturer: Toshiba ↗ Semiconductor
File Size: 268.75 KB
Datasheet: K2719-ToshibaSemiconductor.pdf
Description: N-Channel MOS Type Field Effect Transistor

Features

* failure of which may cause loss of human life, bodily injury, s

Applications

* Low drain-source ON resistance: RDS (ON) = 3.7 Ω (typ. ) High forward transfer admittance: |Yfs| = 2.6 S (typ. ) Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Rating

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K2719 N-Channel MOS Type Field Effect Transistor Toshiba Semiconductor

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