K2723 2SK2723

NEC

Description

DATA SHEET MOS Field Effect Power Transistors 2SK2723 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS (in millimeter) 10.0 ± 0.3.
This product is N-Channel MOS Field Effect Transistor designed for high current switching spplications.

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Datasheet Specifications

Part number: K2723
Manufacturer: NEC
File Size: 113.62 KB
Datasheet: K2723_NEC.pdf
Description: 2SK2723

Features

* 2.5 ± 0.1 0.65 ± 0.1 1.Gate 2.Drain 3.Source 1 2 3 MP-45F (ISOLATED TO-220) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)
* Total Power Dissipation (TA = 25 °C) Total Power Dissipation (Tc = 25 °C) Channel Tempera

Applications

* of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic

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K2723 2SK2723 NEC

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