K15H50C Datasheet - Toshiba

K15H50C TK15H50C

TK15H50C TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI) TK15H50C ○ Switching Regulator Applications Low drain source ON resistance Low leakage current Enhancement mode : RDS (ON) = 0. 33 Ω (typ.) High forward transfer admittance : |Yfs| = 8.5 S (typ.) : IDSS = 100 µA (max) (VDS = 500 V) : Vth = 2.0~4.0 V (VDS = 10 V, I45D = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain source voltage Drain.

K15H50C_Toshiba.pdf