TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1530 2SK1530 High-Power Amplifier Application High breakdown voltage High forward transfer admittance Complementary to 2SJ201 : VDSS = 200V : |Yfs| = 5.0 S (typ.) Maximum Ratings (Ta = 25°C) Characteristics Drain source voltage Gate source voltage Drain current (Note 1) Drain power dissipation (Tc = 25°C) Channel temperature Storage temperature range Symbol VDSS VGSS ID PD Tc Tstg Rating 200 ±20 12 150 1.
