HN4D02JU Silicon Epitaxial Planar Type Diode

Toshiba

Description

TOSHIBA Diode Silicon Epitaxial Planar Type HN4D02JU Ultra High Speed Switching Applications * Low forward voltage : VF (3) = 0.90V (typ.)

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Datasheet Specifications

Part number: HN4D02JU
Manufacturer: Toshiba ↗
File Size: 230.75 KB
Datasheet: HN4D02JU-Toshiba.pdf
Description: Silicon Epitaxial Planar Type Diode

Applications

* Low forward voltage : VF (3) = 0.90V (typ. )
* Fast reverse recovery time : trr = 1.6ns (typ. )
* Small total capacitance : CT = 0.9pF (typ. ) HN4D02JU Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Re

HN4D02JU Distributors

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HN4D02JU Silicon Epitaxial Planar Type Diode Toshiba

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