Datasheet4U Logo Datasheet4U.com

HN4D02JU Silicon Epitaxial Planar Type Diode

HN4D02JU Description

TOSHIBA Diode Silicon Epitaxial Planar Type HN4D02JU Ultra High Speed Switching Applications * Low forward voltage : VF (3) = 0.90V (typ.)

HN4D02JU Applications

* Low forward voltage : VF (3) = 0.90V (typ. )
* Fast reverse recovery time : trr = 1.6ns (typ. )
* Small total capacitance : CT = 0.9pF (typ. ) HN4D02JU Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Re

📥 Download Datasheet

Preview of HN4D02JU PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
HN4D02JU
Manufacturer
Toshiba ↗
File Size
230.75 KB
Datasheet
HN4D02JU-Toshiba.pdf
Description
Silicon Epitaxial Planar Type Diode

📁 Related Datasheet

  • HN4064CG - QUAD 10/100 Base Tx Transformer (Mingtek)
  • HN4065CG - QUAD 10/100 Base Tx Transformer (Mingtek)
  • HN4066CG - QUAD 10/100 Base Tx Transformer (Mingtek)
  • HN4068CG - QUAD 10/100 Base Tx Transformer (Mingtek)
  • HN4400 - NPN EXPITAXIAL SILICON TRANSISTOR (Semtech Corporation)
  • HN4401 - NPN EXPITAXIAL SILICON TRANSISTOR (Semtech Corporation)
  • HN4402 - PNP EXPITAXIAL SILICON TRANSISTOR (Semtech Corporation)
  • HN4403 - PNP EXPITAXIAL SILICON TRANSISTOR (Semtech Corporation)

📌 All Tags

Silicon Epitaxial Planar Type Diode Toshiba
Toshiba HN4D02JU-like datasheet