HN1A02F Silicon PNP Epitaxial Type Transistor

Toshiba

Description

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN1A02F HN1A02F Audio Frequency Power Amplifier Applications Switching applications z Hi.

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Datasheet Specifications

Part number: HN1A02F
Manufacturer: Toshiba ↗
File Size: 139.12 KB
Datasheet: HN1A02F-Toshiba.pdf
Description: Silicon PNP Epitaxial Type Transistor

Applications

* Switching applications z High hFE : hFE(1) = 120 to 400 z Low VCE(sat. ) : VCE (sat) =
* 0.2 V (max) (IC =
* 400 mA, IB =
* 8 mA) z Small Power Motor Driver Application. Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Unit: mm Characteristic Symbol Rating Unit Collecto

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HN1A02F Silicon PNP Epitaxial Type Transistor Toshiba

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