HN1A01FE Silicon PNP Epitaxial Type Transistor

Toshiba

Description

Bipolar Transistors Silicon PNP Epitaxial Type HN1A01FE 1.Applications * Low-Frequency Amplifiers 2..

📥 Download Datasheet

HN1A01FE Datasheet Preview — Preview of HN1A01FE PDF

Datasheet Specifications

Part number: HN1A01FE
Manufacturer: Toshiba ↗
File Size: 281.78 KB
Datasheet: HN1A01FE-Toshiba.pdf
Description: Silicon PNP Epitaxial Type Transistor

Features

* (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Small package (Dual type) (3) High voltage: VCEO = -50 V (4) High collector current: IC = -150 mA (max) (5) High hFE: hFE = 120 to 400 (6) Excellent hFE linearity: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ. ) 3. Packaging an

HN1A01FE Distributors

📁 Related Datasheet

HN16012CG HN16015CG HN16016CG HN16017CG HN16018CG HN16021CG

📌 All Tags

HN1A01FE Silicon PNP Epitaxial Type Transistor Toshiba

Toshiba HN1A01FE-like datasheet