Part number:
GT60PR21
Manufacturer:
File Size:
219.40 KB
Description:
Silicon n-channel igbt.
GT60PR21 Features
* (1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching: IGBT tf = 0.16 µs (typ.) (IC = 60 A) FWD trr = 0.60 µs (typ.) (IF = 15 A) (5) Low saturation voltage: VCE(sat) = 2.0 V (typ.) (IC = 60 A) (6
GT60PR21 Datasheet (219.40 KB)
Datasheet Details
GT60PR21
219.40 KB
Silicon n-channel igbt.
📁 Related Datasheet
GT605G 6 Amp Glass Passivated Quick Connect Rectifier (TAITRON)
GT60J321 Silicon N-Channel IGBT (Toshiba)
GT60J322 Silicon N-Channel IGBT (Toshiba Semiconductor)
GT60J323 Silicon N-Channel IGBT (Toshiba Semiconductor)
GT60J323H Silicon N-Channel IGBT (Toshiba)
GT60M101 Insulated Gate Bipolar Transistor (ETC)
GT60M104 Silicon N-Channel IGBT (Toshiba Semiconductor)
GT60M301 Silicon N-Channel MOSFET (Toshiba Semiconductor)
GT60PR21 Distributor