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GT60J321 Silicon N-Channel IGBT

GT60J321 Description

GT60J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60J321 The 4th Generation Soft Switching Applications Unit: mm *

GT60J321 Applications

* Unit: mm
* Enhancement-mode High speed: tf = 0.30 µs (typ. ) (IC = 60 A) Low saturation voltage: VCE (sat) = 1.55 V (typ. ) (IC = 60 A) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current Coll

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Silicon N-Channel IGBT Toshiba
Toshiba GT60J321-like datasheet