GT600HF65T9H Datasheet - NJSME

GT600HF65T9H IGBT

Conditions Min. Typ. VGE(th) Gate-Emitter Threshold Voltage VCE(sat) Collector-Emitter Saturation Voltage ICES Collector-Emitter Leakage Current IGES Gate-Emitter Leakage Current Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance IC=9.6mA, VCE=VGE TJ=25.

GT600HF65T9H Features

* Trench & Field Stop IGBT

* Short Circuit Rated ＞6μs

* Low Switching Loss

* 100% RBSOA Tested(2×Ic)

* Low Stray Inductance

* Lead Free, Compliant with RoHS Requirement Applications:

* Commercial Agriculture Vehicles

* Motor Drives

* Solar Applications

* UPS

GT600HF65T9H-NJSME.pdf

GT600HF65T9H Datasheet Preview — Preview of GT600HF65T9H PDF

Datasheet Details

Part number:

GT600HF65T9H

Manufacturer:

NJSME

File Size:

940.58 KB

Description:

Igbt.

GT600HF65T9H Distributor

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GT600HF65T9H GT600HF65T9H IGBT NJSME