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C3076 - 2SC3076

C3076 Description

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3076 Power Amplifier Applications Power Switching Applications 2SC3076 Unit: mm <.

C3076 Applications

* Power Switching Applications 2SC3076 Unit: mm
* Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
* Excellent switching time: tstg = 1.0 μs (typ. )
* Complementary to 2SA1241 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Col

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2SC3076 Toshiba
Toshiba C3076-like datasheet