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C3074 2SC3074

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Description

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3074 2SC3074 High Current Switching Applications Unit: mm * Low collector s.

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Features

* and Foreign Trade Law and the U. S. Export Administration Regulations. Expo

Applications

* Unit: mm
* Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A)
* High speed switching time: tstg = 1.0 μs (typ. )
* Complementary to 2SA1244 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Coll

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C3074 2SC3074 Toshiba Semiconductor
Toshiba Semiconductor C3074-like datasheet
C3075