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I: .
SILICON NPN TRIPLE DIFFUSED TYPE
HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATION.
FEATURES • High Collector Current : I C=7A • Low Collector Saturation Voltage : v CE(sat) =0 - 4v (Max -) (at I C =4A) • High Power dissipation : P C=60W (at Tc=25°C) . Complementary to 2SB754.
I5.9MAX
Unit in mm
0Z.2±O.2
MAXIMUM RATINGS (Ta=25 °C)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage Emitter-Base Voltage
Collector Current Emitter Current
Collector Power Dissipation
Junction Temperature
Ta=25°C Tc=25°C
Storage Temperature Range
SYMBOL VCBO VCEO VEBO ic
XE
pc
Tj
Tstg
RATING 50 50
5
7
-7
2.5 60
150 -55M.50
UNIT
V V V
A 1. BASE 2.
2SD844 Datasheet
