• Part: 2SD818
  • Description: NPN Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 89.98 KB
Download 2SD818 Datasheet PDF
Toshiba
2SD818
FEATURES - High Voltage : VCBO =1500V - Low Saturation Voltage : VCE ( sat )=4V (Typ.) - High speed : t f =0.5ys (Typ.) - Glass Passivated Collector-Base Junction. Unit in mm JZf25.0MAX. ^21.0MAX. +0.09 01.0- 0.03 30.2 ±0.2 MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Emitter Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO ic PC T i T stg ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL Collector Cut-off Current Emitter Cut-off Current ICBO i EBO DC Current Gain Collector-Emitter Saturation Voltage h FE v CE(sat) _ +0.08 04.0- 0.15 2^ RATING UNIT I1-^ 600 V 40.0 MAX. 2.5 -2.5 1. BASE Z EMITTER COLLECTOR...