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isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 50V (Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.4V (Max)@IC= 4A ·High Collector Power Dissipation
: PC= 60W @TC=25℃ ·Complement to Type 2SB754 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High current switching applications ·Power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
50
V
VCEO
Collector-Emitter Voltage
50
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
7
A
IE
Emitter Current-Continuous
Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
7
A
2.
2SD844 Datasheet
