2SC3308 - SILICON NPN EPITAXIAL TYPE TRANSISTOR

Features

. Low Collector Saturation Voltage : vCE(sat)=0.4V(Max. ) at Ic=3A . High Speed Switching Time : t s tg=l . 0/is(Typ . ) . Complementary to 2SA1308.

2SC3308 silicon npn epitaxial type transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SC3308
Manufacturer	Toshiba
File Size	133.81 KB
Description	SILICON NPN EPITAXIAL TYPE TRANSISTOR
Datasheet	2SC3308 Datasheet

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Full PDF Text Transcription

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:A SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. FEATURES . Low Collector Saturation Voltage : vCE(sat)=0.4V(Max.) at Ic=3A . High Speed Switching Time : t s tg=l . 0/is(Typ . ) . Complementary to 2SA1308. INDUSTRIAL APPLICATIONS Unit in mm 1H3MAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VcBO VCEO VEBO ic ICP RATING 100 80 PC 30 Tstg 150 -55-150 UNIT 1. BASE 2. COLLECTOR (HEAT SINK' 3.

Published: Jul 17, 2018 |