. Low Collector Saturation Voltage
: vCE(sat)=0.4V (Max. ) (at I C =6A) . High Speed Switching Time : t st g=1.0>us (Typ. ) . Complementary to 2SA1329
Unit in mm 3.0:3 MAX 03.6±Q2.
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SI LICON NPN EPITAXIAL TYPE (PCT PROCESS)
HIGH CURRENT SWITCHING APPLICATIONS.
FEATURES . Low Collector Saturation Voltage
: vCE(sat)=0.4V (Max.) (at I C =6A) . High Speed Switching Time : t st g=1.0>us (Typ.) . Complementary to 2SA1329
Unit in mm 3.0:3 MAX 03.6±Q2
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
SYMBOL v CB0 VCEO VEBO ic IB PC
L stg
ELECTRICAL CHARACTERISTICS (Ta =25°C)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
ICBO
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
lEBO v (BR)CE0
RATING 80 80
UNIT
2.5 4
2.5 4
< s
1
12
1. BASE
2.
2SC3346 Datasheet
