2SC3344 - SILICON NPN TRIPLE DIFFUSED TYPE TRANSISTOR

Toshiba

Key Features

. Excellent Switching Times : t r =1.0/is(Max. ), tf=1.0>us(Max. ) . High Collector Breakdown Voltage : at Ic=4A VcEO=400V.

2SC3344 silicon npn triple diffused type transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SC3344
Manufacturer	Toshiba
File Size	142.20 KB
Description	SILICON NPN TRIPLE DIFFUSED TYPE TRANSISTOR
Datasheet	2SC3344 Datasheet

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Full PDF Text Transcription (Reference)

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: 2SC3344 SILICON NPN TRIPLE DIFFUSED TYPE SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATION. FEATURES . Excellent Switching Times : t r =1.0/is(Max.), tf=1.0>us(Max. ) . High Collector Breakdown Voltage : at Ic=4A VcEO=400V INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX. 7.0 03.2x0.2 czil / ^C ,1 n d X H oci +1 i-" o i-H ITS MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse SYMBOL VCBO VcEO VEBO IC ICP RATING 500 400 UNIT 10 1.4 + Q25 aye -0.15 2.54 + 0.25 WO 1.2 J[ a" s il rf .! 1 -v — 2.54 ± a 25 ->1 dcS +1 =€!& Base Current Collector Power Dissipation Ta=25 C Tc=25 C IB PC 1.7 60 1. BASE 2.