1SS406 Datasheet - Toshiba

1SS406, Schottky Barrier Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS406 High Speed Switching Application 1SS406 Unit: mm z Low forward voltage z Low reverse cu.

Applications

* customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Rel

1SS406-Toshiba.pdf