1SS403E Datasheet - Toshiba

1SS403E, Silicon Epitaxial Planar Switching Diodes

Switching Diodes Silicon Epitaxial Planar 1SS403E 1.Applications * Ultra-High-Speed Switching 2..

Features

* (1) Small package (2) Low reverse current. : IR(2) = 1.0 µA (max) (3) Small total capacitance: Ct = 3.0 pF (max) 3. Packaging and Internal Circuit 1SS403E 1: Cathode 2: Anode ESC 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Uni

1SS403E-Toshiba.pdf