1SS413CT Datasheet - Toshiba

1SS413CT, Schottky Barrier Diode

Schottky Barrier Diode Silicon Epitaxial 1SS413CT 1.Applications * High-Speed Switching 2..

Features

* (1) Low forward voltage : VF(3) = 0.50 V (typ. ) (2) Low reverse current : IR = 0.5 µA (max) (3) Small total capacitance : Ct = 3.9 pF (typ. ) 3. Packaging and Internal Circuit 1SS413CT CST2 1: Cathode 2: Anode 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteris

1SS413CT-Toshiba.pdf