TVR4N TOSHIBA Fast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications (fast recovery)

Toshiba Semiconductor

Description

TVR4J,TVR4N TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR4J,TVR4N High Speed Rectifier Applications (fast recovery) Unit: mm Repetitive Peak .

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Datasheet Specifications

Part number: TVR4N
Manufacturer: Toshiba ↗ Semiconductor
File Size: 120.00 KB
Datasheet: TVR4N_ToshibaSemiconductor.pdf
Description: TOSHIBA Fast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications (fast recovery)

Applications

* (fast recovery) Unit: mm Repetitive Peak Reverse Voltage: VRRM = 600, 1000 V Average Forward Current: IF (AV) = 1.2 A (Ta = 55°C) Reverse Recovery Time: trr = 20 µs Plastic Mold Type.
* Maximum Ratings (Ta = 25°C) Characteristics Repetitive peak reverse voltage TVR4J TVR4N Sy

TVR4N Distributors

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TVR4N TOSHIBA Fast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications fast recovery Toshiba Semiconductor

Toshiba Semiconductor TVR4N-like datasheet