TVR1B Datasheet - Toshiba Semiconductor

TVR1B TOSHIBA Fast Recovery Diode Silicon Diffused Type

TVR1B,TVR1G,TVR1J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR1B,TVR1G,TVR1J TV Applications (fast recovery) Unit: mm Average Forward Current: IF (AV) = 0.5 A (Ta = 65°C) Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V Reverse Recovery Time: trr = 2.0 µs Maximum Ratings (Ta = 25°C) Characteristics TVR1B Repetitive peak reverse voltage TVR1G TVR1J Average forward current (Ta = 65°C) Peak one cycle surge forward current (non repetitive) Junction temperature St.

TVR1B Datasheet (93.46 KB)