TVR4J TOSHIBA Fast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications (fast recovery)

Toshiba Semiconductor

Description

TVR4J,TVR4N TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR4J,TVR4N High Speed Rectifier Applications (fast recovery) Unit: mm Repetitive Peak .

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Datasheet Specifications

Part number: TVR4J
Manufacturer: Toshiba ↗ Semiconductor
File Size: 120.00 KB
Datasheet: TVR4J_ToshibaSemiconductor.pdf
Description: TOSHIBA Fast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications (fast recovery)

Applications

* (fast recovery) Unit: mm Repetitive Peak Reverse Voltage: VRRM = 600, 1000 V Average Forward Current: IF (AV) = 1.2 A (Ta = 55°C) Reverse Recovery Time: trr = 20 µs Plastic Mold Type.
* Maximum Ratings (Ta = 25°C) Characteristics Repetitive peak reverse voltage TVR4J TVR4N Sy

TVR4J Distributors

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TVR4J TOSHIBA Fast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications fast recovery Toshiba Semiconductor

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