TK7J90E - Silicon N-Channel MOSFET

Toshiba Semiconductor

Datasheet Details

Part number	TK7J90E
Manufacturer	Toshiba ↗ Semiconductor
File Size	231.06 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK7J90E-ToshibaSemiconductor.pdf

(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 1.6 Ω (typ. ) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.7 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-3P(N) Start of commercial production 1 2013-12 2014-03-04 Rev.2.0 TK7J90E 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain cur.

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Published: Sep 20, 2014 |