TC55NEM216AFTN70, TC55NEM216AFTN55 - (TC55NEM216AFTN55 / TC55NEM216AFTN77) MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

Toshiba Semiconductor

The TC55NEM216AFTN70 by Toshiba Semiconductor is a (TC55NEM216AFTN55 / TC55NEM216AFTN77) MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS. Below is the official datasheet preview.

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TC55NEM216AFTN70 (TC55NEM216AFTN55 / TC55NEM216AFTN77) MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS by Toshiba Semiconductor - Datasheet Preview — Official preview page of the **TC55NEM216AFTN70** (TC55NEM216AFTN55 / TC55NEM216AFTN77) MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS datasheet (Toshiba Semiconductor).

Datasheet Details

Part number	TC55NEM216AFTN70, TC55NEM216AFTN55
Manufacturer	Toshiba Semiconductor
File Size	219.68 KB
Description	(TC55NEM216AFTN55 / TC55NEM216AFTN77) MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Datasheet	TC55NEM216AFTN55_ToshibaSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: TC55NEM216AFTN70, TC55NEM216AFTN55. Please refer to the document for exact specifications by model.
Additional preview pages of the TC55NEM216AFTN70 datasheet.

TC55NEM216AFTN70 Product details

Description

The TC55NEM216AFTN is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16 bits.

Features

Low-power dissipation Operating: 15 mW/MHz (typical) Single power supply voltage of 5 V ± 10% Power down features using CE Data retention supply voltage of 2.0 to 5.5 V Direct TTL compatibility for all inputs and outputs Wide operating temperature range of.
40° to 85°C Standby Current (maximum): 20 µA.
Access Times (maximum): TC55NEM216AFTN 55 Access Time CE Access Time OE Access Time 70 70 ns 70 ns 35 ns 55.

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Other Datasheets by Toshiba Semiconductor

TC55NEM216AFTN55 - (TC55NEM216AFTN55 / TC55NEM216AFTN77) MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
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Published: Jun 30, 2009 |