TC55NEM208AFTN, TC55NEM208AFPN - TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

Toshiba Semiconductor

The TC55NEM208AFTN by Toshiba Semiconductor is a TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS. Below is the official datasheet preview.

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TC55NEM208AFTN TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS by Toshiba Semiconductor - Datasheet Preview — Official preview page of the **TC55NEM208AFTN** TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS datasheet (Toshiba Semiconductor).

Datasheet Details

Part number	TC55NEM208AFTN, TC55NEM208AFPN
Manufacturer	Toshiba Semiconductor
File Size	134.83 KB
Description	TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Datasheet	TC55NEM208AFPN_ToshibaSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: TC55NEM208AFTN, TC55NEM208AFPN. Please refer to the document for exact specifications by model.
Additional preview pages of the TC55NEM208AFTN datasheet.

TC55NEM208AFTN Product details

Description

The TC55NEM208AFPN/AFTN is a 4,194,304-bit static random access memory (SRAM) organized as 524,288 words by 8 bits.

Features

Low-power dissipation Operating: 15 mW/MHz (typical) Single power supply voltage of 5 V ± 10% Power down features using CE . Data retention supply voltage of 2.0 to 5.5 V Direct TTL compatibility for all inputs and outputs Wide operating temperature range of.
40° to 85°C Standby Current (maximum):20 µA.
Access Times (maximum): TC55NEM208AFPN/AFTN 55 Access Time 55 ns 55 ns 30 ns 70 70 ns 70 ns 35 ns CE Access.

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Published: Feb 9, 2007 |