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SSM6L36TU
TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type
SSM6L36TU
○ High-Speed Switching Applications
• • 1.5-V drive
0.65 0.65
Unit: mm
2.1±0.1 1.7±0.1
Ron = 1.14Ω (max) (@VGS = 1.8 V) Ron = 0.85Ω (max) (@VGS = 2.5 V) Ron = 0.66Ω (max) (@VGS = 4.5 V) Ron = 0.63Ω (max) (@VGS = 5.0 V) Ron = 2.70Ω (max) (@VGS = -1.8 V) Ron = 1.60Ω (max) (@VGS = -2.8 V) Ron = 1.31Ω (max) (@VGS = -4.5 V)
2 3
5 4
0.7±0.05
Q2 P-ch: Ron = 3.60Ω (max) (@VGS = -1.5 V)
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain–source voltage Gate–source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP Rating 20 ±10 500 1000 Unit V V mA
1.Source1 4.Source2 5.Gate2 2.Gate1
UF6
JEDEC JEITA
3.Drain2
6.
SSM6L36TU Datasheet
