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SSM6L39TU - Dual-Channel MOSFET

Features

  • 3 10 ton tr 1 -0.1 1 -0.01 -0.1 -1 -10 Drain-source voltage VDS.

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Full PDF Text Transcription

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SSM6L39TU TOSHIBA Field-Effect Transistor Silicon N / P Channel MOS Type SSM6L39TU ○ Power Management Switch Applications ○ High-Speed Switching Applications • • • N-ch: 1.5-V drive P-ch: 1.8-V drive 0.65 0.65 2.0±0.1 2.1±0.1 1.7±0.1 Unit: mm Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP Rating 20 ±10 1.6 3.2 Unit V V A 0.7±0.05 Q1 Absolute Maximum Ratings (Ta = 25°C) 1.Source1 2.Gate1 3.Drain2 4.Source2 5.Gate2 6.Drain1 Q2 Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP Rating −20 ±8 −1.5 −3 Unit V V A UF6 JEDEC JEITA TOSHIBA ― ― 2-2T1B Weight: 7.0 mg (typ.
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