SSM6J53FE Datasheet - Toshiba Semiconductor

SSM6J53FE, High Current Switching Applications

SSM6J53FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM6J53FE ○ High-Speed Switching

Features

* products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of

Applications

* ○ Power Management Switch Applications
* 1.5 V drive Suitable for high-density mounting due to compact package Unit : mm 1.6±0.05 1.2±0.05 0.2±0.05 0.5 1.6±0.05 1.0±0.05 Low on-resistance : Ron = 136 mΩ (max) (@VGS = -2.5 V) : Ron = 204 mΩ (max) (@VGS = -1.8 V) : Ron

SSM6J53FE_ToshibaSemiconductor.pdf