SSM3K36MFV Datasheet - Toshiba Semiconductor

SSM3K36MFV, N-Channel MOSFET

MOSFETs Silicon N-Channel MOS (U-MOS *) SSM3K36MFV 1.

Features

* (1) 1.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 1.52 Ω (max) (VGS = 1.5 V) RDS(ON) = 1.14 Ω (max) (VGS = 1.8 V) RDS(ON) = 0.85 Ω (max) (VGS = 2.5 V) RDS(ON) = 0.66 Ω (max) (VGS = 4.5 V) RDS(ON) = 0.63 Ω (max) (VGS = 5.0 V) 3. Packaging and Internal Circuit VESM SSM3K36MFV 1: Gate 2:

SSM3K36MFV-ToshibaSemiconductor.pdf