SSM3K329R Datasheet - Toshiba Semiconductor

SSM3K329R-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

SSM3K329R

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

410.10 KB

Description:

Silicon n-channel mosfet.

SSM3K329R, Silicon N-Channel MOSFET

SSM3K329R Features

* (1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 289 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 170 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 126 mΩ (max) (@VGS = 4.0 V) 3. Packaging and Internal Circuit SOT-23F SSM3K329R 1: Gate 2: Source 3: Drain ©2021 1 Toshiba Electronic Devices &

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SSM3K329R Silicon N-Channel MOSFET Toshiba Semiconductor

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