SSM3K131TU Datasheet - Toshiba Semiconductor

SSM3K131TU, Silicon N-Channel MOSFET

SSM3K131TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ) SSM3K131TU ○ High-Speed Switching

Applications

* 4.5-V drive
* Low ON-resistance : Ron = 41.5 mΩ (max) (@VGS = 4.5 V) : Ron = 27.6 mΩ (max) (@VGS = 10 V) 2.1±0.1 1.7±0.1 Unit: mm 0.3-+00..015 2.0±0.1 0.65±0.05 0.166±0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-Source voltage VDSS

SSM3K131TU-ToshibaSemiconductor.pdf