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SSM3K107TU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM3K107TU
High-Speed Switching Applications
• • 4 V drive Low ON-resistance: Unit: mm Ron = 410 mΩ (max) (@VGS = 4V) Ron = 200 mΩ (max) (@VGS = 10V)
0.65±0.05 2.1±0.1 1.7±0.1 +0.1 0.3 -0.05 3 0.166±0.05
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Drain–source voltage Gate–source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) PD (Note 2) Tch Tstg Rating 20 ± 20 1.5 3.0 800 500 150 −55~150 Unit V V A mW °C °C
2.0±0.1
1 2
0.7±0.05
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
SSM3K107TU Datasheet
