SSM3K105TU Datasheet (Toshiba Semiconductor) - Silicon N Channel MOS Type High Speed Switching Applications

SSM3K105TU, Silicon N Channel MOS Type High Speed Switching Applications

www.DataSheet4U.com SSM3K105TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K105TU High Speed Switching Applications 4V drive Low on-resistance: Unit: mm Ron = 480mΩ (max) (@VGS = 3.3V) Ron = 200mΩ (max) (@VGS = 4V) Ron = 110mΩ (max) (@VGS = 10V) 2.0±0.1 2.1±0.1 1.7±0.1 0.65±0.05 +0.1 0.3 -0.05 3 0.166±0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature