SSM3K116TU Datasheet - Toshiba Semiconductor

SSM3K116TU, Silicon N-Channel MOSFET

SSM3K116TU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K116TU High Speed Switching

Applications

* 2.5V drive
* Low on-resistance: Ron = 135mΩ (max) (@VGS = 2.5 V) Ron = 100mΩ (max) (@VGS = 4.5 V) Absolute Maximum Ratings (Ta = 25°C) Unit: mm 2.1±0.1 1.7±0.1 0.3-+00..015 2.0±0.1 0.65±0.05 0.166±0.05 Characteristic Symbol Rating Unit Drain-Source voltage Gate-Source v

SSM3K116TU_ToshibaSemiconductor.pdf