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MT3S113TU - Silicon-Germanium NPN Epitaxial Planar Type Transistor

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Toshiba Semiconductor

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MT3S113TU Silicon-Germanium NPN Epitaxial Planar Type Transistor by Toshiba Semiconductor - Datasheet Preview — Datasheet preview – MT3S113TU

Datasheet Details

Part number	MT3S113TU
Manufacturer	Toshiba Semiconductor
File Size	216.65 KB
Description	Silicon-Germanium NPN Epitaxial Planar Type Transistor
Datasheet	MT3S113TU Datasheet
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Features

Low Noise Figure:NF = 1.15dB (typ. ) (@ f=1GHz).
High Gain:|S21e|2 = 12.5dB (typ. ) (@ f=1GHz) 2.1±0.1 1.7±0.1 Unit: mm 0.3-+00..015 1 2 3 2.0±0.1 0.65±0.05 0.166±0.05 0.7±0.05 Marking 3 R7 1.1. Base 2.2. Emitter 3.3. Collector 1 2 Absolute Maximum Ratings (Ta = 25°C) UFM JEDEC - JEITA -.

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Published: Jun 14, 2016 |