MT3S113P Datasheet - Toshiba Semiconductor

MT3S113P-ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

MT3S113P

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

223.15 KB

Description:

Silicon-germanium npn epitaxial planar type transistor.

MT3S113P, Silicon-Germanium NPN Epitaxial Planar Type Transistor

MT3S113P Features

* Low Noise Figure:NF = 1.15dB (typ.) (@ f=1GHz)

* High Gain:|S21e|2 = 10.5dB (typ.) (@ f=1GHz) Marking R7 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Pw-Mini JEDEC - JEITA SC-62 TOSHIBA 2-5K1A Weight : 0.05 g ( typ.) Collector-emitter volt

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📌 All Tags

MT3S113P Silicon-Germanium NPN Epitaxial Planar Type Transistor Toshiba Semiconductor

Toshiba Semiconductor MT3S113P-like datasheet